The faults are inserted into the memory using the Deep Q-learning fault injection process. The proposed Deep Q-learning-based memory built-in self-test (MBIST) is used to check the memory array unit for faults. In this manuscript, the Deep Q-learning (DQL) with Bit-Swapping-based linear feedback shift register (BSLFSR) for Fault Detection (DQL-BSLFSR-FD) is proposed for Static Random Access Memory (SRAM). For this reason, memory designers commonly use the redundancy method for replacing rows-columns with spare ones mainly to improve the yield of the memories. Thus, it is not easy to repair these memories with the conventional external equipment test method. Generally, memories in SOCs contain various sizes with poor accessibility. Recently, system-on-chips (SOCs) have been developed in nanotechnology, with most of the chip area occupied by memories. Effective fault-tolerant methods are a demand of today's large-size memories. Including redundancy is popular and widely used in a fault-tolerant method for memories.
